1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source 2SK3668 features low gate charge q g =26nctyp.(v dd = 320 v, v gs =10v,i d =10a) gate voltage rating: 30 v low on-state resistance r ds(on) =0.55 max. (v gs =10v,i d =5.0a) surface mount package available absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 400 v gate to source voltage v gss 30 v i d 10 a i dp * 34 a power dissipation t a =25 1.5 t c =25 100 channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current p d w electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =400v,v gs =0 10 a gate leakage current i gss v gs = 30v,v ds =0 100 na gate cut off voltage v gs(off) v ds =10v,i d =1ma 2.5 3.5 v forward transfer admittance y fs v ds =10v,i d =5.0a 3.0 5.6 s drain to source on-state resistance r ds(on)1 v gs =10v,i d =5.0a 0.4 0.55 input capacitance c iss 1320 pf output capacitance c oss 230 pf reverse transfer capacitance c rss 13 pf turn-on delay time t on 18 ns rise time t r 8ns turn-off delay time t off 44 ns fall time tf 4 ns total gate charge q g 26 nc gate to source charge q gs 7nc gate to drain charge q gd 11 nc body diode forward voltage v f(s-d) i f =10a,v gs =0v 0.9 v reverse recovery time t rr i f =10a,v gs = 0 v 350 ns reverse recovery charge q rr d i /d t = 100 a/ s 2.7 c v dd = 320v v gs =10v i d =10a v ds =10v,v gs =0,f=1mhz i d =5.0a,v gs(on) =10v,r g =10 ,v dd =150v smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type smd type smd type smd type smd type ic smd type product specification 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com
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